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Fast joint EELS / EDS color map across a 32 nm transistor device

Methods probe-corrected Jeol ARM 200 TEM/STEM microscope C-FEG emission gun GIF Quantum® ER system Jeol Centurio SDD EDS detector (0.98 sr) O K at 532 eV (red); Ti L at 456 eV (green); Ni L at 855 eV (light blue); N K at 401 eV (yellow); Hf M at 1662 eV (purple) voltage: 200 kV data taken in STEM mode EELS core-loss spectrum (300 – 2300 eV): 1.5 ms

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Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Pavel Potapov at Global Foundries, Dresden, Germany Microscope courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Acknowledgements to Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA for helping set up microscope for experiment.
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