Arsenic dopant mapping in state-of-the-art semiconductor devices using electron energy-loss spectroscopy

Knowledge of the dopant distribution in nanodevices is critical for optimising their electrical performances. We demonstrate with a scanning transmission electron microscope the direct detection and two-dimensional distribution maps of arsenic dopant in semiconductor silicon devices using electron energy-loss spectroscopy. The technique has been applied to 40-45nm high density static random access memory and to n-p-n BiCMOS transistors. The quantitative maps have been compared with secondary ion mass spectrometry analysis and show a good agreement.