Precipitation behavior of Xe at grain boundaries in Si3N4 ceramic during implantation at elevated temperature

Upon implantating of Xe ions into silicon nitride ceramic at 800 °C, the precipitation of Xe at grain boundaries (GBs) was observed. Transmission electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, and electron energy-loss spectroscopy analyses showed that the precipitates at GBs were amorphous Xe nanoparticles. The Xe precipitates grew and coalesced with each other upon post implantation annealing.