Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors.

Published in


Authored by

Häussler, D.; Houben, L.; Essig, S.; Kurttepeli, M.; Dimroth, F.; Dunin-Borkowski, R. E.

Publication date

Monday, July 1, 2013
Resource category
Technique category