Interface-induced nonswitchable domains in ferroelectric thin films

Engineering domains in ferroelectric thin films is crucial for realizing technological applications including non-volatile data storage and solar energy harvesting. Size and shape of domains strongly depend on the electrical and mechanical boundary conditions. Here we report the origin of nonswitchable polarization under external bias that leads to energetically unfavourable head-to-head domain walls in as-grown epitaxial PbZr0.2Ti0.8O3 thin films.

Published in

Nature Communications

Authored by

Han, M-G.; Marshall, M. S. J.; Wu, L.; Schofield, M. A.; Aoki, T.; Twesten, R.; Hoffman, J.; Walker, F. J.; Ahn, C. H.; Zhu, Y.

Publication date

Monday, August 18, 2014
Resource category
Technique category