Investigation of ion induced bending mechanism for nanostructures
Ion induced bending is a promising controlled technique for manipulating nanoscale structures. However, the underlying mechanism of the process is not well understood. In this letter, we report a detailed study of the bending mechanism of Si nanowires (NWs) under Ga+ irradiation. The microstructural changes in the NW due to ion beam irradiation are studied and molecular dynamics simulations are used to explore the ion–NW interaction processes. The simulation results are compared with the microstructural studies of the NW.