Precipitation behavior of Xe at grain boundaries in Si3N4 ceramic during implantation at elevated temperature

Upon implantating of Xe ions into silicon nitride ceramic at 800 °C, the precipitation of Xe at grain boundaries (GBs) was observed. Transmission electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, and electron energy-loss spectroscopy analyses showed that the precipitates at GBs were amorphous Xe nanoparticles. The Xe precipitates grew and coalesced with each other upon post implantation annealing.

Published in

Journal of Nuclear Materials

Authored by

Heo, Y. U.; Takeguchi, M.; Mitsuishi, K.; Song, M.; Nakayama, Y.; Furuya, K.

Publication date

Monday, February 1, 2010
Resource category
Technique category