Rectifying electrical contacts to n- type 6H-SiC formed from energetically deposited carbon

Electrical contacts to n-type 6H-SiC deposited from carbon fluxes with differing energies (0.12 – 1.0 keV) have exhibited deposition energy dependent microstructural and electrical properties. Lower deposition energies resulted in resistive amorphous carbon contacts in which transport occurred by tunneling through an interfacial potential barrier consisting of a mixed oxide/carbon layer.