Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns

We report on the formation of polarity inversion in ordered (In,Ga)N/GaN nanocolumns grown on a Ti-masked GaN-buffered sapphire substrate by plasma assisted molecular beam epitaxy. High-resolution transmission electron microscopy and electron energy-loss spectroscopy reveal a stacking fault-like planar defect at the homoepitaxial GaN interface due to Ti incorporation, triggering the generation of N-polar domains in Ga-polar nanocolumns.

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Authored by

Kong, X.; Li, H.; Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E.; Draxl, C.; Trampert, A.

Publication date

Wednesday, January 13, 2016
Resource category
Technique category