Fluorine
Element density: 1.70 g/L
Electron configuration: [He]2s22p5
Oxidation states: -1
Edges
Explore electron energy loss spectroscopy (EELS) reference spectra, featuring major and minor edges used for elemental identification and chemical state analysis in materials research.
Major edges | |||
|---|---|---|---|
K | 685 |
|  |
Minor edges | |||
|---|---|---|---|
L1 | 31 |
|
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Considerations
Seen in many glass and processed semiconductors. Often a contaminant of etching
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Related spectral data
CsF particles on a thin C film (0 – 180 eV)
Material analyzed: CsF
Related elements: Cesium, Fluorine
Data contributor: Gatan
Beam energy (keV): 120
Nominal energy range (eV): 0 – 180
Collection semi-angle effective (mrad): 13
Notes: Serial EELS; mass loss during acquisition; zero-loss peak intensity = 2.54e8; total elastic int. / zero-loss int. = 0.20; gain change factor = 3192
LiF evaporated onto thin C film (0 – 910 eV)
Material analyzed: LiF
Related elements: Lithium, Fluorine
Data contributor: Gatan
Beam energy (keV): 200
Nominal energy range (eV): 0 – 910
Collection semi-angle effective (mrad): 100
Notes: Serial EELS; intense; mass loss during acquisition; zero-loss peak intensity = 2.42e5; total elastic int. / zero-loss int. = 1.83; gain change factor = 280; 20 sweeps 20 ms dwell
HgF particle on holey C film (0 – 160 eV)
Material analyzed: HgF
Related elements: Mercury, Fluorine
Data contributor: Gatan
Beam energy (keV): 120
Nominal energy range (eV): 0 – 160
Collection semi-angle effective (mrad): 7
Notes: Serial EELS; total elastic int. / zero-loss int. = 0.3; zero-loss saturated
RbF particles on thin C film (0 – 440 eV)
Material analyzed: RbF
Related elements: Rubidium, Fluorine
Data contributor: Gatan
Beam energy (keV): 120
Nominal energy range (eV): 0 – 440
Collection semi-angle effective (mrad): 13
Notes: Serial EELS; mass loss during acquisition; zero-loss peak intensity = 1.3e8; total elastic int. / zero-loss int. = 1.0; gain change factor = 678
