Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes

We investigate strain-free GaAs quantum dots (QDs) fabricated by filling of nanoholes in semiconductor surfaces. The nanoholes are created in a self-organized fashion by local droplet etching with Al droplets as etchants. High resolution transmission electron microscopy (TEM) demonstrates that the quantum dots are free of extended defects. Elemental mapping using local electron energy loss spectroscopy (EELS) shows that the walls surrounding the nanohole openings consist of AlAs. This result confirms that the walls are optically inactive.

Published in

Journal of Crystal Growth

Authored by

Nemcsics, Á.; Heyn, Ch.; Tóth, L.; Dobos, L.; Stemmann, A.; Hansen, W.

Publication date

Tuesday, November 15, 2011
Resource category
Technique category