Minor edges
L131
Considerations
Seen in many glass and processed semiconductors. Often a contaminant of etching
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Related spectral data
RbF particles on thin C film
RbF
Data contributor: Gatan Beam energy (keV): 120 Nominal energy range (eV): 0 - 440 Collection semi-angle effective (mrad): 13
Notes:
Serial EELS; mass loss during acquisition; zero-loss peak intensity = 1.3e8; total elastic int. / zero-loss int. = 1.0; gain change factor = 678
LiF evaporated onto thin C film
LiF
Data contributor: Gatan Beam energy (keV): 200 Nominal energy range (eV): 0 - 910 Collection semi-angle effective (mrad): 100
Notes:
Serial EELS; intense; mass loss during acquisition; zero-loss peak intensity = 2.42e5; total elastic int. / zero-loss int. = 1.83; gain change factor = 280; 20 sweeps 20 ms dwell
Cf particles on a thin C film
CsF
Data contributor: Gatan Beam energy (keV): 120 Nominal energy range (eV): 0 - 180 Collection semi-angle effective (mrad): 13
Notes:
Serial EELS; mass loss during acquisition; zero-loss peak intensity = 2.54e8; total elastic int. / zero-loss int. = 0.20; gain change factor = 3192