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9 FFluorine18.9984

Fluorine

Element Density: 1.696 g/cm³

Electron Configuration:

[He]2s²2p⁵

Oxidation States: -1

Major Edges
K	685

Minor Edges
L₁	31

Considerations

Seen in many glass and processed semiconductors. Often a contaminant of etching

Cf particles on a thin C film_0-0180eV

Material Analyzed:
CsF
Related Elements:Cesium, Fluorine
Data Contributor:Gatan
Beam energy (keV):120
Nominal energy range (eV):0 - 180
Collection semi-angle effective (mrad):13
Notes:
Serial EELS; mass loss during acquisition; zero-loss peak intensity = 2.54e⁸; total elastic int. / zero-loss int. = 0.20; gain change factor = 3192

CsF particles on a thin C film_0-0890eV

Material Analyzed:
CsF
Related Elements:Cesium, Fluorine
Data Contributor:Gatan
Beam energy (keV):1
Nominal energy range (eV):0 - 890
Notes:
Serial EELS; scaled by 0.9 for plotting

HgF particle on holey C film_0-0160eV

Material Analyzed:
HgF
Related Elements:Mercury, Fluorine
Data Contributor:Gatan
Beam energy (keV):120
Nominal energy range (eV):0 - 160
Collection semi-angle effective (mrad):7
Notes:
Serial EELS; total elastic int. / zero-loss int. = 0.3; zero-loss saturated

HgF particle on holey C film_2110-3130eV

Material Analyzed:
HgF
Related Elements:Mercury, Fluorine
Data Contributor:Gatan
Beam energy (keV):120
Nominal energy range (eV):2110 - 3130
Collection semi-angle effective (mrad):10
Notes:
Serial EELS

LiF evaporated onto thin C film_0-0170eV

Material Analyzed:
LiF
Related Elements:Lithium, Fluorine
Data Contributor:Gatan
Beam energy (keV):200
Nominal energy range (eV):0 - 170
Collection semi-angle effective (mrad):0.4
Notes:
Serial EELS; 21 sweeps 20 ms dwell; on ultrathin C