Minor edges
L1149
Considerations
Both K- and L-edges are easily accessible and provide rich fine structure and chemical shifts. L2,3 ELNES very useful in understanding SI based devices and minerals. Sharp low-loss features.
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Related spectral data
SiO2 foil, ion milled
SiO2
Data contributor: Gatan Beam energy (keV): 120 Nominal energy range (eV): 0 - 460 Collection semi-angle effective (mrad): 100
Notes:
Serial EELS; zero-loss peak intensity = 1.73e8; total elastic int. / zero-loss int. = 0.44; gain change factor = 1095
Si single crystal, ion milled_0-0450eV
Si
Related elements:
Silicon
Data contributor:
Gatan
Beam energy (keV):
200
Nominal energy range (eV):
0 - 450
Collection semi-angle effective (mrad):
100
Notes:
Serial EELS; zero-loss peak intensity = 6.93e9; total elastic int. / zero-loss int. = 0.29; gain change factor = 561; 25 sweeps 20 ms dwell