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73
Ta
180.95

Tantalum

Element density: 16.65 g/cm3
Electron configuration:

[Xe]4f145d36s2

Oxidation states: +5

Major edges

What are these symbols?
L39881
M41793
M51735
O245
O336

Minor edges

L111682
L211136
M12708
M22469
M32194
N1566
N2465
N3405
N4241
N5229
O171

Considerations

The M4,5-edge overlaps with Si K-edge and the M-edges of Hf and W. Use MLLS fitting or model based EELS to separate these edges.

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Related spectral data

Ta oxide amorphous thin film_0-3910eV
DM Data
MSA Data

Ta oxide amorphous thin film_0-3910eV

Material analyzed:

TaO

Related elements: Oxygen Tantalum
Data contributor: Gatan Beam energy (keV): 200 Nominal energy range (eV): 0 - 391 Collection semi-angle effective (mrad): 100
Notes:

Serial EELS; zero-loss peak intensity = 3.56e9; total elastic int. / zero-loss int. = 0.37; gain change factor = 395; 60 ms dwell; 60 sweeps; fuzzy rings

Ta oxide amorphous thin film_0-0180eV
DM Data
MSA Data

Ta oxide amorphous thin film_0-0180eV

Material analyzed:

TaO

Related elements: Oxygen Tantalum
Data contributor: Gatan Beam energy (keV): 200 Nominal energy range (eV): 0 - 180 Collection semi-angle effective (mrad): 100
Notes:

Serial EELS; 20 ms dwell 8 sweeps

Ta Si
DM Data
MSA Data

Ta Si

Material analyzed:

Ta-Silicide

Related elements: Tantalum Silicon
Data contributor: Ray Twesten, Gatan, Inc. Beam energy (keV): 200 Nominal energy range (eV): 1600 - 2100 Collection semi-angle effective (mrad): 17