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Fast DualEELS color map across the InP/HfO2 interface

InP substrate is very beam sensitive; EELS analysis was carried out at high-speed to avoid electron beam-induced damage.

Methods

Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; voltage: 200 kV; STEM mode

Authored by

Paolo Longo PhD, Gatan, Inc. Sample courtesy of Professor Robert Wallace at UTD, Richardson, TX Microscope courtesy of Professor Ray Carpenter, Arizona State University, Tempe AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.
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