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  • Colorized EELS elemental map
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    This work was performed in collaboration with Dr. Phil Rice and Dr. Teya Topuria of IBM Almaden Research Center in San Jose, CA who provided expert assistance as well as the TEM specimen and access to their microscope facilities.

    Colorized EELS elemental map of Ti L2,3-edges at 456 eV (green), Mn L2,3-edges at 640 eV (blue), La M4,5-edges at 832 eV (purple) and Sr L2,3-edges at 1940 eV (red).

  • Jointly acquired HAADF and MAADF signals
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    The HAADF signal (left) contrast is easily interpreted in terms of mass thickness of the material while the diffraction contrast MAADF signal (right) reveals highly detailed structural changes in the material. The optimized geometry makes this possible.

  • Fast EELS analysis of AlNiCo based metal alloy for magnetic purposes
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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Li Zhou at Ames Lab, Iowa

    EELS data taken using a FEI F20 TEM/STEM microscope equipped with S-FEG emission gun and a fully loaded GIF Quantum® ER system. Methods Voltage: 200 kV; data taken in STEM mode; EELS spectrum (300 – 2300 eV) exposure time: 8 ms; total exposure time:

  • Atomic DualEELS analysis of CaFeO2,5 Brownmillerite structure—Investigating the presence of oxygen vacancies
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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Ramachandra Rao at Indian Institute of Technology, Chennai Madras, India Microscope courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy

    Fe-O atoms are arranged in alternating tetrahedral and octahedral planes that can be distinguished looking at the fine structure of the O K-edge at 532 eV.

  • First atomic EELS map acquired during volcano eruption
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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Microscope courtesy of Dr. Giuseppe Nicotra, IMM-CNR, Catania, Italy

    The lab where EELS maps were taken is situated at the slopes of Mount Etna in Sicily, Italy. Mount Etna is the highest active volcano in Europe. The EELS elemental maps were taken at high speed during major volcano eruption, as shown in the volcano webcam photograph above the maps.

  • Fast joint EELS / EDS color map across a 32 nm transistor device
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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Pavel Potapov at Global Foundries, Dresden, Germany Microscope courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Acknowledgements to Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA for helping set up microscope for experiment.

    Methods probe-corrected Jeol ARM 200 TEM/STEM microscope C-FEG emission gun GIF Quantum® ER system Jeol Centurio SDD EDS detector (0.98 sr) O K at 532 eV (red); Ti L at 456 eV (green); Ni L at 855 eV (light blue); N K at 401 eV (yellow); Hf M at 1662 eV (purple) voltage: 200 kV data taken in STEM

  • Ultrafast giant atomic EELS color map across the SrTiO3/LaMnO4 interfaces
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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Microscope courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Acknowledgement to Dr. P. Rice and Dr. T. Topuria at IBM (Almaden) for helping set up microscope for experiment.

    Legend Green: Ti L at 456 eV; red: Sr L at 1940 eV; purple: La M at 832 eV; blue: Mn L at 640 eV Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; C-FEG emission gun; GIF Quantum® ER system; voltage: 200 kV; data taken in STEM mode; EELS core-loss spectrum (30 – 2300 eV): 1.5 ms; beam cur

  • Fast DualEELS color map across the InP/HfO2 interface
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    Paolo Longo PhD, Gatan, Inc. Sample courtesy of Professor Robert Wallace at UTD, Richardson, TX Microscope courtesy of Professor Ray Carpenter, Arizona State University, Tempe AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

    InP substrate is very beam sensitive; EELS analysis was carried out at high-speed to avoid electron beam-induced damage. Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; voltage: 200 kV; STEM mode

  • Fast atomic DualEELS color map across the SrTiO3/SrMnO4 interface
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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor David J. Smith at Arizona State University, Tempe, AZ Microscope courtesy of Professor Ray Carpenter at Arizona State University, Tempe, AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

    Legend Red: Ti L at 456 eV; green: Sr L at 1940 eV; yellow: La M at 832 eV; blue: Mn L at 640 eV Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; ​voltage: 200 kV; STEM mode; EELS low core-loss spectrum (280 – 2280 eV): 4 ms

  • Fast DualEELS color map of a III-V transistor device structure before gate metallization process

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    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of University of Glasgow Microscopecourtesy of Professor Gerald Kothleitner, TU-Graz, Austria

    Methods

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