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High speed EELS composition analysis, in DualEELS mode, of metal alloy ohmic contacts for the fabrication of III-V MOSFET devices

Methods

As the size of III-V devices decreases, ohmic contacts and their performance becomes increasingly significant. . . .
Atomic level EELS mapping using high energy edges in DualEELS mode

Methods

Over the past few years, with the advancements in aberration-corrected transmission electron microscopy, the spatial resolution in scanning transmission electron microscopy (STEM) has been enormously improved. . . .
Fast DualEELS analysis of the distribution of Pd particles and their chemistry in zeolite

Media Image

Paolo Longo, Ph.D., Gatan, Inc.

The EELS analysis shows how Pd particles chemically interact with support.
Atomic DualEELS analysis of CaFeO2,5 Brownmillerite structure—Investigating the presence of oxygen vacancies

Media Image

Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Ramachandra Rao at Indian Institute of Technology, Chennai Madras, India Microscope courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy

Fe-O atoms are arranged in alternating tetrahedral and octahedral planes that can be distinguished looking at the fine structure of the O K-edge at 532 eV.
Fast DualEELS color map across the InP/HfO2 interface

Media Image

Paolo Longo PhD, Gatan, Inc. Sample courtesy of Professor Robert Wallace at UTD, Richardson, TX Microscope courtesy of Professor Ray Carpenter, Arizona State University, Tempe AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

InP substrate is very beam sensitive; EELS analysis was carried out at high-speed to avoid electron beam-induced damage.

Methods

Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; voltage: 200 kV; STEM mode
Fast atomic DualEELS color map across the SrTiO3/SrMnO4 interface

Media Image

Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor David J. Smith at Arizona State University, Tempe, AZ Microscope courtesy of Professor Ray Carpenter at Arizona State University, Tempe, AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

Legend

Red: Ti L at 456 eV; green: Sr L at 1940 eV; yellow: La M at 832 eV; blue: Mn L at 640 eV

Methods
Fast DualEELS color map of a III-V transistor device structure before gate metallization process

Media Image

Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of University of Glasgow Microscopecourtesy of Professor Gerald Kothleitner, TU-Graz, Austria

Methods
Fast atomic DualEELS analysis at 60 kV of graphene layers after graphitization process of SiC

Media Image

Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy Microscope courtesy of IMM-CNR, Catania, Italy

Methods

Probe-corrected ARM 200F TEM/STEM microscope; C-FEG emission gun; GIF Quantum® ER system; voltage: 60 kV; STEM mode; EELS low-loss spectrum (0 – 500 eV) exposure time: 0.01 ms; EELS core-loss spectrum (70 – 570 eV) exposure time: 10 ms; total exposure time:
EELS color map of a Pd/Au catalyst particle

Media Image

Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Jianfang’s group, Chinese University, Hong Kong Microscope courtesy of IBM, Fishkill, NY

Pd/Au alloys have attracted a lot of interest due to their resistance at high temperatures, and this explains their use in several fields, such as CO and hydrocarbon oxidation, synthesis of vinyl acetate monomer, hydrocarbon hydrogenation, and many others.

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