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Fast atomic DualEELS analysis at 60 kV of graphene layers after graphitization process of SiC

Fast atomic DualEELS analysis at 60 kV of graphene layers after graphitization process of SiC

Methods Probe-corrected ARM 200F TEM/STEM microscope; C-FEG emission gun; GIF Quantum® ER system; voltage: 60 kV; STEM mode; EELS low-loss spectrum (0 – 500 eV) exposure time: 0.01 ms; EELS core-loss spectrum (70 – 570 eV) exposure time: 10 ms; total exposure time:

Authored by

Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy Microscope courtesy of IMM-CNR, Catania, Italy
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