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  • High speed EELS composition analysis, in DualEELS mode, of metal alloy ohmic contacts for the fabrication of III-V MOSFET devices

    Methods

    As the size of III-V devices decreases, ohmic contacts and their performance becomes increasingly significant. . . .

  • Atomic level EELS mapping using high energy edges in DualEELS mode

    Methods

    Over the past few years, with the advancements in aberration-corrected transmission electron microscopy, the spatial resolution in scanning transmission electron microscopy (STEM) has been enormously improved. . . .

  • Fast DualEELS analysis of the distribution of Pd particles and their chemistry in zeolite
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc.

    The EELS analysis shows how Pd particles chemically interact with support.

  • Atomic DualEELS analysis of CaFeO2,5 Brownmillerite structure—Investigating the presence of oxygen vacancies
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Ramachandra Rao at Indian Institute of Technology, Chennai Madras, India Microscope courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy

    Fe-O atoms are arranged in alternating tetrahedral and octahedral planes that can be distinguished looking at the fine structure of the O K-edge at 532 eV.

  • Fast DualEELS color map across the InP/HfO2 interface
    Media Image
    Paolo Longo PhD, Gatan, Inc. Sample courtesy of Professor Robert Wallace at UTD, Richardson, TX Microscope courtesy of Professor Ray Carpenter, Arizona State University, Tempe AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

    InP substrate is very beam sensitive; EELS analysis was carried out at high-speed to avoid electron beam-induced damage. Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; voltage: 200 kV; STEM mode

  • Fast atomic DualEELS color map across the SrTiO3/SrMnO4 interface
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor David J. Smith at Arizona State University, Tempe, AZ Microscope courtesy of Professor Ray Carpenter at Arizona State University, Tempe, AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

    Legend Red: Ti L at 456 eV; green: Sr L at 1940 eV; yellow: La M at 832 eV; blue: Mn L at 640 eV Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; ​voltage: 200 kV; STEM mode; EELS low core-loss spectrum (280 – 2280 eV): 4 ms

  • Fast DualEELS color map of a III-V transistor device structure before gate metallization process

    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of University of Glasgow Microscopecourtesy of Professor Gerald Kothleitner, TU-Graz, Austria

    Methods

  • Fast atomic DualEELS analysis at 60 kV of graphene layers after graphitization process of SiC
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy Microscope courtesy of IMM-CNR, Catania, Italy

    Methods Probe-corrected ARM 200F TEM/STEM microscope; C-FEG emission gun; GIF Quantum® ER system; voltage: 60 kV; STEM mode; EELS low-loss spectrum (0 – 500 eV) exposure time: 0.01 ms; EELS core-loss spectrum (70 – 570 eV) exposure time: 10 ms; total exposure time:

  • EELS color map of a Pd/Au catalyst particle
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Jianfang’s group, Chinese University, Hong Kong Microscope courtesy of IBM, Fishkill, NY

    Pd/Au alloys have attracted a lot of interest due to their resistance at high temperatures, and this explains their use in several fields, such as CO and hydrocarbon oxidation, synthesis of vinyl acetate monomer, hydrocarbon hydrogenation, and many others.