Resources

Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of approximately 30-90nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-A ele

A study of GaN–AlGaN nanowire heterostructures grown by molecular beam epitaxy on sapphire substrates is presented. Nanowire growth was promoted using nickel seeds formed by in-situ annealing of a Ni thin film.

We study materials that present challenges for conventional elemental mapping techniques and can in some cases be treated successfully using independent component analysis (ICA).

Cycle performance of a LiAl0.10Ni0.76Co0.14O2 (NCA) cathode/graphite cell closely depended on the range of depth of discharge in charge–discharge processes (ΔDOD). When ΔDOD was 10–70%, cycle performance at 25 °C was maintained even at 60 °C.