EELS.info

Search form

Resources

Oldest
Latest
Showing 1-10 of 42

  • Elemental mapping in achromatic atomic-resolution energy-filtered transmission electron microscopy

    Publication
    Ultramicroscopy
    Forbes, B. D.; Houben, L.; Mayer, J.; Dunin-Borkowski, R. E.; Allen, L. J.

    We present atomic-resolution energy-filtered transmission electron microscopy (EFTEM) images obtained with the chromatic-aberration-corrected FEI Titan PICO at the Ernst-Ruska Centre, Jülich, Germany.

  • EELS color map of a Pd/Au catalyst particle
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Jianfang’s group, Chinese University, Hong Kong Microscope courtesy of IBM, Fishkill, NY

    Pd/Au alloys have attracted a lot of interest due to their resistance at high temperatures, and this explains their use in several fields, such as CO and hydrocarbon oxidation, synthesis of vinyl acetate monomer, hydrocarbon hydrogenation, and many others.

  • Plasmon peak position map going from diamond (yellow) to amorphous carbon (blue)

    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Jaco Oliver at NMMU, Port Elizabeth, South Africa Microscope courtesy of NMMU, Port Elizabeth, South Africa

    Analysis of the changes in local carbon structure caused by self-implantation of carbon into diamond and chemistry.

  • EELS color map of a Pt/Fe catalyst nanoparticle
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor Gianluigi Botton at CCEM, Hamilton, ON, Canada Microscope courtesy of CCEM, Hamilton, ON, Canada Acknowledgement to Dr. M. Bugnet at CCEM for helping set up microscope for experiment.

    Pt/Fe nanocatalysts are among the most promising candidates for accelerating oxygen reduction reaction occurring at the cathode in a proton exchange membrane fuel cell.

  • Fast atomic DualEELS analysis at 60 kV of graphene layers after graphitization process of SiC

    Fast atomic DualEELS analysis at 60 kV of graphene layers after graphitization process of SiC
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Giuseppe Nicotra at IMM-CNR, Catania, Italy Microscope courtesy of IMM-CNR, Catania, Italy

    Methods Probe-corrected ARM 200F TEM/STEM microscope; C-FEG emission gun; GIF Quantum® ER system; voltage: 60 kV; STEM mode; EELS low-loss spectrum (0 – 500 eV) exposure time: 0.01 ms; EELS core-loss spectrum (70 – 570 eV) exposure time: 10 ms; total exposure time:

  • Fast DualEELS color map of a III-V transistor device structure before gate metallization process

    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of University of Glasgow Microscopecourtesy of Professor Gerald Kothleitner, TU-Graz, Austria

    Methods

  • Fast atomic DualEELS color map across the SrTiO3/SrMnO4 interface
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Professor David J. Smith at Arizona State University, Tempe, AZ Microscope courtesy of Professor Ray Carpenter at Arizona State University, Tempe, AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

    Legend Red: Ti L at 456 eV; green: Sr L at 1940 eV; yellow: La M at 832 eV; blue: Mn L at 640 eV Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; ​voltage: 200 kV; STEM mode; EELS low core-loss spectrum (280 – 2280 eV): 4 ms

  • Fast DualEELS color map across the InP/HfO2 interface
    Media Image
    Paolo Longo PhD, Gatan, Inc. Sample courtesy of Professor Robert Wallace at UTD, Richardson, TX Microscope courtesy of Professor Ray Carpenter, Arizona State University, Tempe AZ Acknowledgement to Dr. Toshiro Aoki at Jeol USA (now at ASU) for helping set up microscope for experiment.

    InP substrate is very beam sensitive; EELS analysis was carried out at high-speed to avoid electron beam-induced damage. Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; S-FEG emission gun; Enfinium™ ER system; voltage: 200 kV; STEM mode

  • Ultrafast giant atomic EELS color map across the SrTiO3/LaMnO4 interfaces
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Microscope courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Acknowledgement to Dr. P. Rice and Dr. T. Topuria at IBM (Almaden) for helping set up microscope for experiment.

    Legend Green: Ti L at 456 eV; red: Sr L at 1940 eV; purple: La M at 832 eV; blue: Mn L at 640 eV Methods Probe-corrected Jeol ARM 200 TEM/STEM microscope; C-FEG emission gun; GIF Quantum® ER system; voltage: 200 kV; data taken in STEM mode; EELS core-loss spectrum (30 – 2300 eV): 1.5 ms; beam cur

  • Fast joint EELS / EDS color map across a 32 nm transistor device
    Media Image
    Paolo Longo, Ph.D., Gatan, Inc. Sample courtesy of Dr. Pavel Potapov at Global Foundries, Dresden, Germany Microscope courtesy of Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA Acknowledgements to Dr. P. Rice and Dr. T. Topuria at IBM (Almaden), San Jose, CA for helping set up microscope for experiment.

    Methods probe-corrected Jeol ARM 200 TEM/STEM microscope C-FEG emission gun GIF Quantum® ER system Jeol Centurio SDD EDS detector (0.98 sr) O K at 532 eV (red); Ti L at 456 eV (green); Ni L at 855 eV (light blue); N K at 401 eV (yellow); Hf M at 1662 eV (purple) voltage: 200 kV data taken in STEM

Pages