Journal of Crystal Growth
Lari, L.; Walther, T.; Gass, M.H.; Geelhaar, L.;Chèze, C.; Riechert, H.; Bullough, T. J.; Chalker, P. R.
A study of GaN–AlGaN nanowire heterostructures grown by molecular beam epitaxy on sapphire substrates is presented. Nanowire growth was promoted using nickel seeds formed by in-situ annealing of a Ni thin film.